The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jan. 12, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yi-Hsiu Chen, Hsinchu, TW;
Kenichi Sano, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02222 (2013.01); H01L 21/31111 (2013.01); H01L 21/31138 (2013.01);
Abstract
A selective etching process includes treating a first dielectric region and a second dielectric region of a semiconductor device with a self-assembled-monolayer-forming compound to form a self-assembled monolayer to selectively cover the first dielectric region so as to expose the second dielectric region; and selectively etching the second dielectric region using a dilute acid solution while the first dielectric region is protected by the self-assembled monolayer from being etched by the dilute acid solution.