The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 24, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yenxia Hao, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for increasing the process window to avoid bridging between the device's contact hole and gate, including: placing a semiconductor structure containing a gate structure in a reaction cavity, wherein reaction gases fed sequentially into the reaction cavity include the first reaction gas containing Si and Cl, a second reaction gas containing C and a third reaction gas containing O. Thus, a first film containing Cl is formed on the sidewalls of the gate structure. Further, a fourth reaction gas containing H is fed into the reaction cavity, after the fourth reaction gas completes reaction with Cl in the first film, a second film is formed on the sidewalls of the gate. A fifth gas containing N is then fed into the reaction cavity, which reacts with the second film to form a third film on the spacer of the gate structure.