The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Jul. 27, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Abu Naser Zainuddin, Milpitas, CA (US);

Jiahui Yuan, Fremont, CA (US);

Deepanshu Dutta, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

Technology for a storage system that reduces the Icc during open block reads. A lower than nominal voltage may be applied to the bit lines during open block reads, which reduces Icc. A nominal bit line voltage may be used during closed block reads. The lower than nominal bit line voltage may be combined with using a lower than nominal read pass voltage (Vread) to unprogrammed word lines during the open block read. The lower than nominal Vread has a lower magnitude than a nominal Vread used during a closed block read. Combining the lower than nominal bit line voltage with the lower than nominal Vread to unprogrammed word lines further reduces Icc during open block reads. The ramp rate of Vread may be relaxed (made slower) during at least some open block reads in combination with the lower than nominal bit line voltage.


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