The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); G03F 1/42 (2012.01); G03F 1/44 (2012.01); G03F 7/20 (2006.01); G06F 17/16 (2006.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G03F 1/42 (2013.01); G03F 1/44 (2013.01); G03F 7/2004 (2013.01); G06F 17/16 (2013.01);
Abstract
Methods of semiconductor device fabrication are provided. In an embodiment, a method of semiconductor device fabrication includes receiving a first mask design comprising a first mask function, determining a transmission cross coefficient (TCC) of an exposure tool, decomposing the TCC into a plurality orders of eigenvalues and a plurality orders of eigenfunctions, calculating a kernel based on the plurality orders of eigenvalues and the plurality orders of eigenfunctions; and determining a first sub-resolution assist feature (SRAF) seed map by convoluting the first mask function and the kernel.