The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

May. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-Hsien Chang, Zhubei, TW;

Shih-Fen Huang, Jhubei, TW;

Chun-Ren Cheng, Hsin-Chu, TW;

Fu-Chun Huang, Zhubei, TW;

Ching-Hui Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/00 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); A61B 5/00 (2006.01);
U.S. Cl.
CPC ...
H10F 39/8063 (2025.01); H10F 39/024 (2025.01); H10F 39/198 (2025.01); H10F 39/8053 (2025.01); H10F 39/8067 (2025.01); A61B 5/68 (2013.01); A61B 2562/146 (2013.01);
Abstract

The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.


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