The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor structures and methods of forming the same are provided. A method according to an embodiment includes receiving a workpiece comprising a first semiconductor element and a second semiconductor element, and a dielectric fin disposed between the first semiconductor element and the second semiconductor element. The method also includes forming a masking layer directly over the dielectric fin, etching the first semiconductor element and the second semiconductor element to form a first recess and a second recess, and forming a first source/drain feature and a second source/drain feature in the first recess and the second recess, respectively. By employing a masking layer and patterning the masking layer to have different widths, a parasitic resistance and a parasitic capacitance of the semiconductor structure may be adjusted accordingly, and undesirably bridging between two adjacent epitaxial source/drain features may be prevented.