The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jun. 16, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Su Chen Fan, Cohoes, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/84 (2006.01); H01L 23/522 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/28518 (2013.01); H01L 21/76877 (2013.01); H10D 30/6737 (2025.01); H10D 30/6743 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/013 (2025.01); H10D 84/0133 (2025.01); H10D 84/0149 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 88/00 (2025.01); H10D 88/01 (2025.01); H10D 30/6735 (2025.01); H10D 62/151 (2025.01); H10D 84/0186 (2025.01);
Abstract
A microelectronic structure including a stacked transistor having a lower transistor and an upper transistor. A shared contact in contact with a lower source/drain of the first lower transistor and an upper source/drain of the upper transistor. The shared contact includes a silicide layer, a metal plug layer, and a conductive metal layer.