The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jan. 04, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi-Hsien Chung, New Taipei, TW;
Tzu-Jui Wang, Fengshan, TW;
Shang-Fu Yeh, Hsin Chu, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first chip bonded to a second chip. The first chip includes a semiconductor substrate. The first chip includes a first transistor cell and a second transistor cell. The second transistor cell is laterally spaced from the first transistor cell. A first through-substrate via (TSV) extends vertically through the semiconductor substrate. The first transistor cell is electrically coupled to the first TSV. A second TSV extends vertically through the first semiconductor substrate. The second transistor cell is electrically coupled to the second TSV. The second chip comprises a first readout circuit that is electrically coupled to the first TSV and the second TSV. The first readout circuit is disposed laterally between the first TSV and the second TSV. The first readout circuit is configured to receive a first signal from the first transistor cell.