The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Apr. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien Yao Huang, Hsinchu, TW;

Wun-Jie Lin, Hsinchu, TW;

Kuo-Ji Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/90 (2025.01); G06F 30/392 (2020.01); G06F 119/06 (2020.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/907 (2025.01); G06F 30/392 (2020.01); H10D 84/854 (2025.01); H10D 89/10 (2025.01); G06F 2119/06 (2020.01); H10D 84/853 (2025.01); H10D 84/961 (2025.01); H10D 84/991 (2025.01);
Abstract

An integrated circuit (IC) device includes a plurality of first doped regions of a first semiconductor type over at least one first well region of the first semiconductor type, and a second doped region of a second semiconductor type over a second well region of the second semiconductor type. The second semiconductor type is different from the first semiconductor type. The plurality of first doped regions is arranged along a first direction. Each of the plurality of first doped regions has a first length in the first direction. The second doped region extends in the first direction between at least two first doped regions among the plurality of first doped regions over a second length greater than the first length.


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