Metal oxide semiconductor with multiple drain vias

Abstract

A metal oxide semiconductor (MOS) with multiple drain vias includes a semiconductor substrate, which is divided into a gate region, a source region and a drain region. On the same surface of the semiconductor substrate in the gate region, a connection layer is formed in the source region and the drain region with a low-resistance metal material. A plurality of conductive elements, such as solder balls, can be directly arranged on the connection layer, so that the MOS can be soldered to the circuit board through the conductive elements distributed on the same surface. In the drain region, there are a plurality of vias. The inside of each via is filled with the connection layer and extends to the inside of the semiconductor substrate. With the aforementioned structure, the MOS has the advantage of low on-resistance R.