The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jul. 13, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Po-Chin Chang, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes two source/drain features, a gate structure, a first contact plug, a second contact plug, a conductive line, and a nitride capping layer. The two source/drain features are laterally arranged to each other. The one or more channel layers connects the two source/drain features. The gate structure engages the one or more channel layers and interposes the two source/drain features. The first contact plug extends from above a first source/drain feature of the two source/drain features to the first source/drain feature. The second contact plug extends from below a second source/drain feature of the two source/drain features to the second source/drain feature. The conductive line is disposed underneath the second contact plug and electrically coupled to the second contact plug. The nitride capping layer is disposed between the second contact plug and the conductive line.