The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Sep. 26, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Semyeong Jang, Hefei, CN;
Joonsuk Moon, Hefei, CN;
Deyuan Xiao, Hefei, CN;
Minki Hong, Hefei, CN;
Kyongtaek Lee, Hefei, CN;
Jo-Lan Chin, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure includes a base, a dielectric layer, a gate structure, and a covering layer. The base includes discrete semiconductor pillars. The semiconductor pillars are disposed at the top of the base and extend in a vertical direction. The dielectric layer covers the sidewall of the semiconductor pillar. The gate structure is disposed in the middle area of the semiconductor pillar. The gate structure includes a gate-all-around structure, the gate-all-around surrounding the semiconductor pillar. A first part of the dielectric layer is disposed between the gate structures and the semiconductor pillars. The covering layer covers the top of the semiconductor pillar and part of the sidewall close to the top. The material of the covering layer includes a boron-containing compound.