The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 27, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hidehiro Fujiwara, Hsinchu, TW;
Chih-Yu Lin, Hsinchu, TW;
Hsien-Yu Pan, Hsinchu, TW;
Yasutoshi Okuno, Hsinchu, TW;
Yen-Huei Chen, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory circuit includes a first pull down transistor, a first pass gate transistor coupled to the first pull down transistor, a second pull down transistor, a second pass gate transistor and a first metal contact. The second pull down transistor has a first active region located on a first level. The second pass gate transistor has a second active region located on the first level, and being coupled to the second pull down transistor. The first metal contact extends from the first active region to the second active region, being located on a second level, and electrically coupling a drain of the second pull down transistor to a drain of the second pass gate transistor. The first pass gate transistor, the second pass gate transistor, the first pull down transistor and the second pull down transistor are part of a four transistor (4T) memory cell.