The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jan. 28, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10D 84/0149 (2025.01);
Abstract
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; forming a fin structure on the substrate; forming a first dummy gate on the fin structure; forming a trench to penetrate the first dummy gate and the fin structure; forming a dielectric stack in the trench; removing a top portion of the dielectric stack in the trench to leave a lower portion of the dielectric stack in the trench; and forming a protective layer in the trench and directly on the lower portion of the dielectric stack.