The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

May. 05, 2023
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Yu Lin, New Taipei, TW;

Feng-Min Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G06F 7/544 (2006.01); G11C 17/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G06F 7/5443 (2013.01); G11C 17/16 (2013.01); G11C 13/0021 (2013.01);
Abstract

A memory device for performing an in-memory computation, comprising a plurality of memory cells each stores a weight value and comprises a transistor and a resistor. A gate of the transistor receives an input voltage, the input voltage indicates an input value. When the transistor operates at a first operating point, the input voltage is equal to a first input voltage, when the transistor operates at a second operating point, the input voltage is equal to a second input voltage. The resistor is connected to a drain and a source of the transistor, when the resistor operates in a first state, the weight value is equal to a first weight value, when the resistor operates in a second state, the weight value is equal to a second weight value. Each of the memory cells performs a product computation of the input value and the weight value.


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