The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Feb. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Chu-bei, TW;

Yao-Jen Yang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); H01L 23/48 (2006.01); H10B 20/25 (2023.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
G11C 17/165 (2013.01); H01L 23/481 (2013.01); H10B 20/25 (2023.02); H10D 30/6735 (2025.01); H10D 62/121 (2025.01);
Abstract

A memory device includes a plurality of one-time-programmable (OTP) memory cells formed as a memory array. Each of the plurality of OTP memory cells includes a transistor and a metal structure electrically coupled to each other in series, and the plurality of OTP memory cells are formed on a first side of a substrate. The memory device includes a heater structure, disposed on a second side of the substrate opposite to the first side, that includes a plurality of interconnect structures. The plurality of interconnect structures are configured to conduct a substantially high current so as to elevate a temperature of the resistor when any of the OTP memory cells is being programmed.


Find Patent Forward Citations

Loading…