The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jun. 07, 2024
Intel Corporation, Santa Clara, CA (US);
Dan S. Lavric, Beaverton, OR (US);
Glenn A. Glass, Portland, OR (US);
Thomas T. Troeger, Portland, OR (US);
Suresh Vishwanath, Portland, OR (US);
Jitendra Kumar Jha, Hillsboro, OR (US);
John F. Richards, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Srijit Mukherjee, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. A titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. The titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. The titanium silicide material has a total atomic composition including 95% or greater stoichiometric TiSi.