The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jul. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Mauricio Manfrini, Zhubei, TW;
Marcus Johannes Henricus Van Dal, Linden, BE;
Georgios Vellianitis, Heverlee, BE;
Gerben Doornbos, Kessel-Lo, BE;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6739 (2025.01); H01L 21/02565 (2013.01); H01L 21/443 (2013.01); H10B 53/30 (2023.02); H10B 61/22 (2023.02); H10B 63/30 (2023.02); H10D 30/6755 (2025.01); H10D 99/00 (2025.01);
Abstract
A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and a drain electrode on end portions of the active layer. The metal oxide liner comprises a thin semiconducting metal oxide material that functions as a hydrogen barrier material.