Semiconductor structure and fabrication method thereof

Abstract

Embodiments relate to a semiconductor structure and a fabrication method thereof. The method for fabricating a semiconductor structure includes: providing a substrate, where a semiconductor stacked structure formed by alternately stacking first semiconductor layers and second semiconductor layers is formed on the substrate; patterning the semiconductor stacked structure to form cell structures extending along a first direction and arranged at intervals; removing a part of the first semiconductor layers positioned in first regions in the cell structures, such that a part of the second semiconductor layers positioned in the first regions form capacitor support structures; and forming capacitors on exposed surfaces of the capacitor support structures, where the capacitors include first electrodes, dielectric layers and second electrodes sequentially stacked along a direction distant from the capacitor support structures; and all the capacitors in the first regions share the same second electrode.