The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Sep. 21, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Tae-Yeol Kim, Hwaseong-si, KR;

Hyon-Wook Ra, Hwaseong-si, KR;

Seo-Bum Lee, Seoul, KR;

Jun-Soo Kim, Uijeongbu-si, KR;

Chung-Hwan Shin, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 84/40 (2025.01); H10D 84/80 (2025.01); H01L 21/285 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01); H10D 30/69 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/76804 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/5283 (2013.01); H10D 84/403 (2025.01); H10D 84/817 (2025.01); H01L 21/28518 (2013.01); H01L 21/76834 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H01L 23/5329 (2013.01); H10D 30/795 (2025.01); H10D 64/691 (2025.01); H10D 84/811 (2025.01);
Abstract

A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.


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