The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shu-Cheng Chin, Hsinchu, TW;
Chih-Chien Chi, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Barrier-free interconnects and methods of fabrication thereof are disclosed herein. An exemplary interconnect structure has a conductive line disposed over a conductive via. The conductive line has a first conductive plug disposed in a first dielectric layer, and the first conductive plug includes an electrically conductive non-metal material, such as graphite. The conductive via includes a second conductive plug disposed in a second dielectric layer, and the second conductive plug includes a metal material, such as tungsten, ruthenium, molybdenum, or combinations thereof. The first conductive plug physically contacts the second conductive plug and the second dielectric layer. The second conductive plug physically contacts the second dielectric layer. Spacers (which are insulators) may be disposed between sidewalls of the first conductive plug and the first dielectric layer. The spacers may further be disposed between the first dielectric layer and the second dielectric layer.