The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Sep. 23, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Alok Ranjan, Austin, TX (US);

Peter Ventzek, Austin, TX (US);

Mitsunori Ohata, Taiwa-cho, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32082 (2013.01); H01J 37/321 (2013.01); H01J 37/32128 (2013.01); H01J 37/32146 (2013.01); H01J 37/32165 (2013.01); H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01L 21/6833 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamber, a source power coupling element configured to generate plasma in the processing chamber, and a source power supply node coupled to the source power coupling element and configured to supply radio frequency power to the source power coupling element. The plasma processing apparatus further includes a substrate holder disposed in the processing chamber, a first bias power supply node coupled to the substrate holder and configured to supply first direct current biased power to the substrate holder, and a second bias power supply node coupled to the substrate holder and configured to supply second direct current biased power to the substrate holder. The first direct current biased power includes a first bias power frequency less than about 800 kHz and the second direct current biased power includes a second bias power frequency greater than 800 kHz.


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