The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Oct. 26, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); B24B 1/00 (2006.01); B24B 37/04 (2012.01); B24B 37/30 (2012.01); C09G 1/00 (2006.01); C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B24B 1/00 (2013.01); B24B 37/042 (2013.01); B24B 37/044 (2013.01); B24B 37/30 (2013.01); C09G 1/00 (2013.01); C09G 1/02 (2013.01); C09K 3/1436 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); H01L 21/02024 (2013.01); H01L 21/3212 (2013.01);
Abstract
Methods for polishing semiconductor substrates are disclosed. The methods may involve alternating a first and second polishing slurry during polishing. The first and second slurries each contain silica particles with the silica particles of the first slurry containing more silica than the particles of the second slurry. By alternating between first and second polishing slurries, the polishing method may improve wafer flatness.