Memory cell and method of forming the memory cell

Abstract

A method of forming a memory cell includes: providing a semiconductor substrate; forming an active region on the semiconductor substrate; providing a first conductive line over a first portion of the active region to form a first transistor coupled to a bit line of the memory cell; providing a second conductive line over a second portion of the active region to form a second transistor coupled to the bit line of the memory cell; and providing a third conductive line over a third portion of the active region to form a third transistor coupled to a first word line of the memory cell. The first transistor and the second transistor are disposed on two sides of the third transistor, and the third transistor electrically couples the first transistor to the second transistor. A threshold voltage of the second transistor is different from a threshold voltage of the first transistor.