The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Mar. 22, 2023
Applicant:

Nuflare Technology, Inc., Kanagawa, JP;

Inventors:

Yoshikazu Moriyama, Shizuoka, JP;

Yoshiaki Daigo, Tokyo, JP;

Toru Watanabe, Kanagawa, JP;

Shigeaki Ishii, Kanagawa, JP;

Assignee:

NuFlare Technology, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C23C 16/32 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C23C 16/325 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); C30B 25/12 (2013.01); C30B 29/36 (2013.01);
Abstract

A film deposition method according to an embodiment includes rotating a wafer mounted on a susceptor in a reaction chamber. Next, a temperature of the wafer is controlled such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC film on the wafer, a force of friction generated on a contact surface between the wafer and the susceptor becomes larger than a force of inertia generated in a direction of rotation of the wafer.


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