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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12389662 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

May. 17, 2022

Formation method of shallow trench isolation

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Szu-Ying Chen, Hsinchu, TW;

Chia-Cheng Chen, Hsinchu, TW;

Liang-Yin Chen, Hsinchu, TW;

Sen-Hong Syue, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/0259 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/0188 (2025.01); H10D 84/85 (2025.01);
Abstract

A method of forming a semiconductor device includes etching trenches in a substrate to form fin structures, depositing a liner layer to line the trenches, filling the trenches with an insulating layer, performing an ion implantation process to the insulating layer, after performing the ion implantation process, recessing the insulating layer to form shallow trench isolation (STI) regions adjacent the fin structures, and forming a gate crossing the fin structures.

Find Patent Forward Citations

Chen, Szu-Ying. (2025). Formation method of shallow trench isolation (U.S. Patent No. 12389662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12389662

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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