The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jan. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yi-Bo Liao, Hsinchu, TW;
Yu-Xuan Huang, Hsinchu, TW;
Cheng-Ting Chung, Hsinchu, TW;
Hou-Yu Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 64/021 (2025.01);
Abstract
A device includes a substrate, a gate structure, a capping layer, a source/drain region, a source/drain contact, and an air spacer. The gate structure wraps around at least one vertical stack of nanostructure channels over the substrate. The capping layer is on the gate structure. The source/drain region abuts the gate structure. The source/drain contact is on the source/drain region. The air spacer is between the capping layer and the source/drain contact.