The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Sep. 21, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Liang Chen, Wuhan, CN;
Wei Liu, Wuhan, CN;
Yanhong Wang, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Kun Zhang, Wuhan, CN;
Yuancheng Yang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes an array of memory cells. The second semiconductor structure includes a first peripheral circuit of the array of memory cells. The first peripheral circuit includes a first transistor. The first semiconductor structure or the second semiconductor structure further includes a second peripheral circuit of the array of memory cells. The second peripheral circuit includes a second transistor. The first peripheral circuit and the second peripheral circuit are stacked over one another.