The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 14, 2022
Applicant:
Versum Materials Us, Llc, Tempe, AZ (US);
Inventors:
Sergei V. Ivanov, Schnecksville, PA (US);
Michael T. Savo, Bethlehem, PA (US);
Assignee:
Versum Materials US, LLC, Tempe, AZ (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/308 (2013.01); C23C 16/4408 (2013.01); C23C 16/4554 (2013.01);
Abstract
A method for depositing vanadium-containing films, including vanadium nitride and vanadium oxynitride, that generally includes (i) contacting a substrate with vanadium oxytrichloride vapor in a deposition reactor, (ii) purging any unreacted vanadium oxytrichloride with inert gas, (iii) contacting the substrate with a nitrogen containing reactant in a deposition reactor and (iv) purging any unreacted nitrogen containing reactant with inert gas. Additional steps can be included, for example substrate (v) treatment with plasma to remove residual oxygen from oxynitride film.