The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Sep. 20, 2022
Applicants:

Changxin Memory Technologies, Inc., Hefei, CN;

Beijing Superstring Academy of Memory Technology, Beijing, CN;

Inventors:

Guangsu Shao, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Yong Yu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/20 (2023.01); H10B 12/00 (2023.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10D 62/402 (2025.01); H10D 62/80 (2025.01);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, and bit lines, word lines, active pillars, and a memory structure that are located on the base. The bit line extends along a first direction, the word line extends along a second direction, the first direction is one of a direction perpendicular to a surface of the base or a direction parallel to the surface of the base, and the second direction is the other of the direction perpendicular to the surface of the base or the direction parallel to the surface of the base. The active pillars are parallel to the base and arranged at intervals, the word line surrounds a channel region of the active pillar, the memory structure surrounds a support region of the active pillar.


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