The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jan. 17, 2023
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
David Demuynck, Santa Clara, CA (US);
Subhash Srinivas Pidaparthi, Santa Clara, CA (US);
Sharlene Wilson, Santa Clara, CA (US);
Karthik Suresh Arulalan, Santa Clara, CA (US);
Mark Curtice, Santa Clara, CA (US);
Andrew P. Edwards, Santa Clara, CA (US);
Clifford Drowley, Santa Clara, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A method of forming alignment marks, each alignment mark including a plurality of fiducials, includes providing a III-V compound substrate having a device region and an alignment mark region. The method also includes forming a first hardmask in the device region and a hardmask structure in the alignment mark region, etching a first surface portion of the III-V compound substrate to form a plurality of trenches in the device region, and epitaxially regrowing a semiconductor layer in the trenches. The method further includes forming a second mask in the device region and a patterned structure in the alignment mark region. The patterned structure includes a set of masked regions corresponding to the plurality of fiducials and a second set of openings. The method also includes forming the plurality of fiducials.