The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Feb. 09, 2022
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Tai-Jyun Yu, Taoyuan, TW;
Sheng-Tsai Wu, Taoyuan, TW;
Kuo-Shu Kao, New Taipei, TW;
Han-Lin Wu, Hsinchu, TW;
Tai-Kuang Lee, Taoyuan, TW;
Jing-Yao Chang, New Taipei, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49548 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83815 (2013.01);
Abstract
A power semiconductor device, including a terminal base, is provided. The terminal base has a first end and a second end opposite to each other. The first end has a first flange expanding outward. The first flange is welded to a pad of a substrate by a solder. An included angle between an extension direction of the first flange and a length direction of the terminal base is greater than 90 degrees.