The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Jun. 12, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Hsinchu, TW;

Yao-Jen Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G11C 17/16 (2006.01); H10B 20/20 (2023.01); H10B 20/25 (2023.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 17/16 (2013.01); H10B 20/20 (2023.02); H10B 20/25 (2023.02);
Abstract

A memory device includes a bit line, a source line, a program word line, a read word line, a memory cell including a program transistor and a read transistor, and a controller. The program transistor includes a gate terminal coupled to the program word line, a first terminal coupled to the source line, and a second terminal. The read transistor includes a gate terminal coupled to the read word line, a first terminal coupled to the bit line, and a second terminal coupled to the second terminal of the program transistor. The controller is configured to, in a programming operation, cause a program current to flow through the memory cell along a first current path. The controller is further configured to, in a read operation, cause a read current to flow through the memory cell along a second current path different from the first current path.


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