The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Mar. 20, 2023
Intel Ndtm Us Llc, Santa Clara, CA (US);
Kristopher H. Gaewsky, El Dorado Hills, CA (US);
Kevin K. Liou, Rancho Cordova, CA (US);
Intel NDTM US LLC, Santa Clara, CA (US);
Abstract
For NAND devices having a zero voltage program state as a result of a preconditioning operation, detecting the status of the zero voltage program state is important for customers to quickly validate their component and SSD flows to improve NAND retention and reliability after assembly and die level re-work. A zero voltage program state detection operation quickly determines the validity of the zero voltage program state of a NAND page of a NAND device. The detection operation includes reading a NAND page with reference voltages that delimit a predetermined acceptable range of voltage levels below and above a zero threshold voltage. If NAND memory cells having threshold voltage levels that fall below or above the acceptable voltage levels exceed a predetermined failed bytes limit for the NAND page, the zero voltage program state is invalid.