The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
May. 05, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Christine Y Ouyang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/42 (2006.01); G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/027 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
G03F 7/427 (2013.01); G03F 7/0043 (2013.01); G03F 7/027 (2013.01); G03F 7/70033 (2013.01); H01L 21/0273 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/31138 (2013.01); H01L 21/56 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/5283 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/19 (2013.01); H01L 2224/023 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/92244 (2013.01);
Abstract
A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.