The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jun. 01, 2022
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Keunwook Shin, Yongin-si, KR;
Kibum Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Minhyun Lee, Suwon-si, KR;
Changseok Lee, Gwacheon-si, KR;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Seoul National University R&DB Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/186 (2017.01); C01B 32/188 (2017.01); H10D 64/01 (2025.01); H10D 64/20 (2025.01);
U.S. Cl.
CPC ...
C01B 32/186 (2017.08); C01B 32/188 (2017.08); H10D 64/01 (2025.01); H10D 64/205 (2025.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01); C01B 2204/32 (2013.01);
Abstract
Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).