The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jul. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Hsiang Tseng, Changhua County, TW;

Chih-Fei Lee, Tainan, TW;

Chia-Pin Cheng, Kaohsiung, TW;

Fu-Cheng Chang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/30 (2025.01); H10F 30/28 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 77/331 (2025.01); H10F 30/2857 (2025.01); H10F 39/011 (2025.01); H10F 39/18 (2025.01); H10F 77/40 (2025.01); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11);
Abstract

An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. The nanostructure array includes a plurality of nanostructures repeatedly arranged from a top view.


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