The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 07, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Anindya Nath, Essex Junction, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Robert J. Gauthier, Jr., Williston, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
An integrated circuit (IC) structure with a conductive pathway through resistive semiconductor material, e.g., for bipolar transistors, is provided. The IC structure may include a resistive semiconductor material having a first end coupled to a first doped semiconductor material. The first doped semiconductor material has a first doping type. A doped well may be coupled to a second end of the resistive semiconductor material. The doped well has a second doping type opposite the first doping type. A second doped semiconductor material is coupled to the doped well and has the first doping type. The resistive semiconductor material is within a conductive pathway from the first doped semiconductor material to the second doped semiconductor material.