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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12376338 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Feb. 16, 2022

Semiconductor device structure with dielectric dummy gate and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sheng-Hsiung Wang, Zhubei, TW;

Tung-Heng Hsieh, Zhudong Town, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Jay C Kim

Assistant Examiner:

Joshua Scott Wyatt

Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/031 (2025.01); H10D 30/6757 (2025.01); H10D 62/119 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The fin has a wide portion and a width-transition portion. The width-transition portion tapers away from the wide portion in a top view of the substrate, and a first top surface of the wide portion is higher than a second top surface of the width-transition portion. The semiconductor device structure includes a gate stack wrapped around the wide portion. The semiconductor device structure includes a dielectric dummy gate wrapped around the width-transition portion.

Find Patent Forward Citations

Wang, Sheng-Hsiung. (2025). Semiconductor device structure with dielectric dummy gate and method for forming the same (U.S. Patent No. 12376338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12376338

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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