The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jul. 18, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Venkatesh Gopinath, Fremont, CA (US);

Bipul C. Paul, Mechanicville, NY (US);

Xiaoli Hu, Shanghai, CN;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/82 (2023.02); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); H10B 63/34 (2023.02); H10N 70/253 (2023.02);
Abstract

Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a first plurality of resistive memory elements including a first plurality of bottom electrodes, a first top electrode, and a first switching layer between the first top electrode and the first plurality of bottom electrodes. The structure further comprises a second plurality of resistive memory elements including a second plurality of bottom electrodes, a second top electrode, and a second switching layer between the second top electrode and the second plurality of bottom electrodes. The first top electrode is shared by the first plurality of resistive memory elements, and the second top electrode is shared by the second plurality of resistive memory elements.


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