Semiconductor structure and method for fabricating same

Abstract

Embodiments provide a semiconductor structure and a method for fabricating the same, and relate to the field of semiconductor technology. The method includes: providing a substrate provided with word line trenches and bit line trenches, where the word line trenches and the bit line trenches separate the substrate into active pillars arranged at intervals, and along a first direction, a dielectric layer is provided between adjacent active pillars; forming initial protective layers on side walls of the word line trenches; forming word line isolation structures in the region surrounded by the initial protective layers, the word line isolation structures having gaps therein; forming sealing members configured to seal up at least tops of the gaps; forming first filling regions; and forming word lines extending along the first direction in the first filling regions. Parasitic capacitance is prevented in the semiconductor structure, and performance of the semiconductor structure is improved.