The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jan. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ching-Hung Kao, Tainan, TW;

Kuei-Yu Deng, Taichung, TW;

Tzy-Kuang Lee, Taichung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02181 (2013.01); H01L 2224/02185 (2013.01); H01L 2224/0219 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/35121 (2013.01);
Abstract

A semiconductor device and method of manufacturing the same are provided. The semiconductor device may include a substrate, a first via, a first pad, a second pad, and a first passivation layer. The first pad may be over the substrate. The second pad may be over the substrate. The second pad may be parallel to the first pad. The first passivation layer may surround the first pad and the second pad. The first passivation layer may include a first part on the first pad. The first passivation layer may include a second part on the second pad. A thickness of the first part of the first passivation layer may exceed a height of the first pad. A thickness of the second part of the first passivation layer may exceed a height of the second pad.


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