The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Mar. 30, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Lifang Xu, Boise, ID (US);

Harsh Narendrakumar Jain, Boise, ID (US);

Indra V. Chary, Boise, ID (US);

Umberto Maria Meotto, Rivoli, IT;

Paolo Tessariol, Arcore, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 20/00 (2023.01); H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 51/20 (2023.01); H10B 53/20 (2023.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 20/50 (2023.02); H10B 41/20 (2023.02); H10B 41/27 (2023.02); H10B 41/50 (2023.02); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 51/20 (2023.02); H10B 53/20 (2023.02); H10D 88/00 (2025.01);
Abstract

Microelectronic devices include a stack structure having a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of stadiums, within the stack structure, includes stadiums of differing numbers of staircase sets, such as a stadium having multiple parallel sets of staircases and an additional stadium having a single set of staircases. Each of the staircases includes steps, at ends of the conductive structures, with a same multi-tier riser height. In methods of fabrication, a same initial stadium opening may be concurrently formed for each of the stadiums—regardless of whether the stadium is to include the single set or the multiple parallel sets of staircases—with the steps of the same multi-tier riser height. Electronic systems are also disclosed.


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