The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Mar. 30, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 84/0174 (2025.01); H10D 84/038 (2025.01); H10D 84/856 (2025.01); H10D 64/01 (2025.01); H10D 64/513 (2025.01); H10D 64/661 (2025.01); H10D 64/665 (2025.01);
Abstract
A semiconductor structure and forming method thereof are provided. A substrate includes a region. A first gate structure and a sacrificial gate structure are recessed in the substrate and disposed in the region. The sacrificial gate structure is adjacent to the first gate structure. A first contact is electrically connected to the first gate structure. A sacrificial gate masking structure is disposed over the sacrificial gate structure. An upper surface of the sacrificial gate structure is entirely covered by the sacrificial gate masking structure.