The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Aug. 29, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 24/08 (2013.01); H01L 24/05 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80222 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract
A semiconductor die is provided, comprising a semiconductor substrate, a dielectric layer over the semiconductor substrate, a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate, and a region including a plurality of embedded nanoparticles in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the plurality of embedded nanoparticles to an externally-applied field.