The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chao-Wei Chiu, Hsinchu, TW;

Chao-Wei Li, Hsinchu, TW;

Hsiu-Jen Lin, Hsinchu County, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/38 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H10N 10/82 (2023.01);
U.S. Cl.
CPC ...
H01L 23/38 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H10N 10/82 (2023.02);
Abstract

Provided is a package structure including a first redistribution layer (RDL) structure, a die, a circuit substrate, and a first thermoelectric cooler. The RDL) structure has a first side and a second side opposite to each other. The die is disposed on the first side of the first RDL structure. The circuit substrate is bonded to the second side of the first RDL structure through a plurality of first conductive connectors. The first thermoelectric cooler is between the first RDL structure and the circuit substrate, wherein the first thermoelectric cooler includes at least a N-type doped region and at least a P-type doped region.


Find Patent Forward Citations

Loading…