The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jul. 28, 2022
Tokyo Electron Limited, Tokyo, JP;
Masahiko Yokoi, Miyagi, JP;
Koki Tanaka, Miyagi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
The plasma processing method according to the present disclosure is performed in a plasma processing apparatus. The plasma processing method comprises preparing a substrate including a silicon-containing film and a carbon-containing film formed on the silicon-containing film; setting a temperature of the substrate to a first temperature of 0° C. or less; supplying HO to the substrate using a first processing gas containing comprising at least one of (a) gas comprising hydrogen atoms and oxygen atoms, and (b) a first gas comprising hydrogen atoms and a second gas comprising oxygen atoms; forming plasma from the first processing gas using a radio frequency and etching the carbon-containing film; setting the temperature of the substrate to a second temperature different from the first temperature; supplying a second processing gas containing a hydrogen- and fluorine-containing gas or both a hydrogen-containing gas and a fluorine-containing gas to the substrate; and forming plasma from the second processing gas using a radio frequency and etching the silicon-containing film.