The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
May. 03, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takatoshi Orui, Miyagi, JP;
Ryutaro Suda, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Kae Kumagai, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32568 (2013.01); H01J 37/32449 (2013.01); H01J 37/32082 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01);
Abstract
A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comprises supplying the processing gas into the chamber, supplying a first radio-frequency signal for generating the plasma to the substrate support or the upper electrode, and supplying a first electrical bias to the upper electrode.