The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Nov. 24, 2022
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Heng-Chung Chang, Taichung, TW;

Chih-Ya Tsai, Taichung, TW;

Hui-Chi Su, Kaohsiung, TW;

Jing-Yuan Lin, New Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/20 (2006.01);
U.S. Cl.
CPC ...
G01J 5/20 (2013.01);
Abstract

An infrared device is provided. The infrared device includes a substrate, a metal layer, a first semiconductor layer, an absorber layer, and a second semiconductor layer. The metal layer is disposed on the substrate. The first semiconductor layer is disposed on the substrate and electrically connected to the metal layer. A cavity is formed between the first semiconductor layer and the metal layer. The absorber layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the absorber layer and electrically connected to the first semiconductor layer. The TCR of the first semiconductor layer is different from that of the second semiconductor layer.


Find Patent Forward Citations

Chang, Heng-Chung. (2025). Infrared device and method for manufacturing the same (U.S. Patent No. 12366482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12366482

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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