The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jun. 07, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yeh-Hsun Fang, Taipei, TW;

Chiao-Chi Wang, Hsiang, TW;

Chung-Chuan Tseng, Hsinchu, TW;

Chia-Ping Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01);
U.S. Cl.
CPC ...
H10F 39/021 (2025.01); H10F 39/199 (2025.01); H10F 39/802 (2025.01); H10F 39/811 (2025.01);
Abstract

A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.


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